The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Aug. 26, 2005
Sung Ku Kwon, Daejeon, KR;
Young Kyun Cho, Jeonrabuk-do, KR;
Jong Dae Kim, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A process for manufacturing a silicon on insulator (SOI) substrate is described. The process includes forming a buried oxidation layer in a first wafer and forming an oxidation layer on the first wafer. A buried hydrogen layer is formed in the first wafer deeper than the buried oxidation layer. A second wafer is bonded onto the first oxidation layer. The first wafer is removed below the buried hydrogen layer to expose the first wafer between the buried oxidation layer and the buried hydrogen layer. The exposed first wafer and the buried oxidation layer are sequentially removed to expose the first wafer between the buried oxidation layer and the first oxidation layer. Finally, a predetermined thickness of the first wafer exposed in the previous step is removed. Accordingly, a highly uniform and ultra thin SOI substrate is formed without employing a CMP process.