The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Sep. 28, 2006
Francois Brunier, Grenoble, FR;
Vivien Renauld, Pontcharra, FR;
Jean Marc Waechter, Saint Vincent De Mercuze, FR;
Francois Brunier, Grenoble, FR;
Vivien Renauld, Pontcharra, FR;
Jean Marc Waechter, Saint Vincent De Mercuze, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention provides methods for reducing trap densities at interfaces in a multilayer semiconductor wafer, specifically trap densities between an active layer and an insulating layer under the active layer. The methods comprise exposing wafers to high temperatures in a generally neutral atmosphere that also comprises one or more species that can, or whose ions can, migrate into the wafer down to the interface where reduction of the trap density is desired.