The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Mar. 11, 2008
Koji Takaya, Tokyo, JP;
Koji Takaya, Tokyo, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
A method for fabricating a semiconductor memory, the method including: forming an element isolation region in a concave portion of the semiconductor substrate; forming a layer of a gate electrode material so as to cover the concave portion and the element isolation region; forming a gate electrode by forming a mask on a surface of the layer of a gate electrode material so that a height from an upper surface of the convex portion to the surface of the mask is higher than a height from the surface of the element isolation region to the upper surface of the convex portion and by patterning the layer of the gate electrode material; forming a charge storing layer at least one of side surfaces of the gate electrode in contact with the convex portion; and forming a sidewall on a part of the charge storing layer.