The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Dec. 05, 2007
Michihiro Kanno, Kanagawa, JP;
Michihiro Kanno, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor integrated circuit including a logic part and a memory array part, the logic part having N-type and P-type FETs, and the memory array part having N-type and P-type FETs, includes the steps of forming N-type and P-type FETs constituting the logic part and the memory array part, thereafter sequentially forming a first insulation film having a tensile stress and a second insulation film on the whole surface, selectively removing the second insulation film and the first insulation film present on the upper side of the region of the P-type FET constituting the logic part, then forming a third insulation film having a compressive stress on the whole surface, and thereafter selectively removing the third insulation film present on the upper side of the region of the N-type FET constituting the logic part and the third insulation film present on the upper side of the regions of the N-type and P-type FETs constituting the memory array part.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile