The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7601553 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 13, 2009

Filed:

Jul. 16, 2004
Applicants:

Tae-kyung Yoo, Yongin-si, KR;

Joong-seo Park, Yongin-si, KR;

Chang-tae Kim, Seongnam-si, KR;

Inventors:

Tae-Kyung Yoo, Yongin-si, KR;

Joong-Seo Park, Yongin-si, KR;

Chang-Tae Kim, Seongnam-si, KR;

Assignee:

EpiValley Co., Ltd., Gyeonggi, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semi-conductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon thermal decomposition generates a radical being combined with a hydrogen radical to eliminate the hydrogen radical, thereby eliminates the need for a subsequent annealing process for removing hydrogen and prevents the active layer from being thermally damaged due to the subsequent annealing process.


Find Patent Forward Citations

Yoo, Tae-Kyung. (2009). Method of manufacturing a gallium nitride semiconductor light emitting device (U.S. Patent No. 7601553). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7601553

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