The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Jul. 20, 2005
Applicant:
Houjin Huang, Kanagawa, JP;
Inventor:
Houjin Huang, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
D01F 9/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
Carbon nanotube, method for positioning the same, field effect transistor made using the carbon nanotube, method for making the field-effect transistor, and a semiconductor device are provided. The carbon nanotube includes a bare carbon nanotube and a functional group introduced to at least one end of the bare carbon nanotube.
Huang, Houjin. (2009). Method for making field-effect transistor using carbon nanotube (U.S. Patent No. 7601322). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7601322
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile