The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Oct. 04, 2004
Tadao Ishibashi, Tokyo, JP;
Seigo Ando, Tokyo, JP;
Ken Tsuzuki, Musashino, JP;
NTT Electronics Corporation, Tokyo, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
The present invention relates to a semiconductor optoelectronic waveguide having a nin-type hetero structure which is able to stably operate an optical modulator. On the upper and lower surfaces of the core layer determined for the structure so that electro-optical effects are effectively exerted at an operating light wavelength and are provided with intermediate clad layers having a band gap which is greater than that of the core layer. Respectively on the upper and the lower surface of the intermediate clad layer are provided the clad layers having the band gap which is greater than those of the intermediate clad layers. On the upper surface of the clad layer are sequentially laminated a p-type layer and an n-type layer. In the applied voltage range used under an operating state, a whole region of the p-type layer and a part or a whole region of the n-type layer are depleted.