The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Sep. 19, 2005
James S. Harris, Jr., Stanford, CA (US);
David A. B. Miller, Stanford, CA (US);
Yu-hsuan Kuo, Stanford, CA (US);
James S. Harris, Jr., Stanford, CA (US);
David A. B. Miller, Stanford, CA (US);
Yu-Hsuan Kuo, Stanford, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Si—Ge quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have 'Kane-like' bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the SiGematerial system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. A preferred method of providing such quantum well structures on a substrate (e.g., a silicon substrate) is to grow a first Ge-rich Si—Ge buffer layer on the substrate, and then anneal the resulting layered structure. In many cases it is further preferred to grow a second Ge-rich Si—Ge buffer layer on top of the first buffer layer and anneal the resulting layered structure.