The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Jun. 13, 2007
Joseph Charles Boisvert, Thousand Oaks, CA (US);
Takahiro D. Isshiki, Pasadena, CA (US);
Rengarajan Sudharsanan, Stevenson Ranch, CA (US);
Joseph Charles Boisvert, Thousand Oaks, CA (US);
Takahiro D. Isshiki, Pasadena, CA (US);
Rengarajan Sudharsanan, Stevenson Ranch, CA (US);
The Boeing Company, Chicago, IL (US);
Abstract
A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A Pdiffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the Pdiffusion region.