The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Jan. 13, 2006
Claude L. Bertin, South Burlington, VT (US);
Mitchell Meinhold, Arlington, MA (US);
Steven L. Konsek, Boston, MA (US);
Thomas Rueckes, Rockport, MA (US);
Frank Guo, Danville, CA (US);
Claude L. Bertin, South Burlington, VT (US);
Mitchell Meinhold, Arlington, MA (US);
Steven L. Konsek, Boston, MA (US);
Thomas Rueckes, Rockport, MA (US);
Frank Guo, Danville, CA (US);
Nanotero, Inc., Woburn, MA (US);
Abstract
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.