The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Aug. 18, 2004
Atsushi Okamoto, Kawasaki, JP;
Toshiharu Takaramoto, Kawasaki, JP;
Atsushi Okamoto, Kawasaki, JP;
Toshiharu Takaramoto, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
A semiconductor device has transistors (P,P,P) formed in an active region () isolated by a trench isolation region, and a predetermined circuit including a first and second transistors (P,P) that require symmetry or relativity characteristics, wherein the distances (S) between a gate electrode and one end of the active region on a source side viewed from the gate electrode in the first and second transistor are substantially same, and the distances (D) between a gate electrode and one end of the active region on a drain side viewed from the gate electrode in the first and second transistor are substantially same. The predetermined circuit includes, for example, a current mirror circuit that has a transistor pair of which gate is commonly connected, and a differential circuit that has a transistor pair whose sources are commonly connected, where an input signal is supplied to the gate, and an output signal is generated in the drain.