The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Mar. 19, 2008
Yuan-fa Chu, Miao-Li Hsien, TW;
Yuan-Fa Chu, Miao-Li Hsien, TW;
Foxsemicon Integrated Technology, Inc., Chu-Nan, Miao-Li Hsien, TW;
Abstract
A light emitting diode () includes a first and a second semiconductor structures (), and an adhesive layer () between the first and the second semiconductor structures. The first semiconductor structure includes a n-type AlGaInP cladding layer (), a p-type AlGaInP cladding layer (), an AlGaInP active layer () between the n-type and the p-type AlGaInP cladding layers, a transparent conducting layer () on the n-type AlGaInP cladding layer, a first electrical contact () on the transparent conducting layer, ohmic electrodes () ohmic contact the p-type AlGaInP cladding layer, and a reflecting layer () on an opposite side of the p-type AlGaInP cladding layer to the AlGaInP active layer. The second semiconductor structure includes a carrier substrate (), an ohmic contact layer () on the carrier substrate, and a second electrical contact () on an opposite side of the carrier substrate to the ohmic contact layer.