The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Jan. 07, 2005
Phaedon Avouris, Yorktown Heights, NY (US);
Roy A. Carruthers, Stormville, NY (US);
Jia Chen, Ossining, NY (US);
Christophe G. M. M. Detavernier, Ghent, BE;
Christian Lavoie, Ossining, NY (US);
Hon-sum Philip Wong, Palo Alto, CA (US);
Phaedon Avouris, Yorktown Heights, NY (US);
Roy A. Carruthers, Stormville, NY (US);
Jia Chen, Ossining, NY (US);
Christophe G. M. M. Detavernier, Ghent, BE;
Christian Lavoie, Ossining, NY (US);
Hon-Sum Philip Wong, Palo Alto, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.