The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Sep. 26, 2006
Tomonari Yamamoto, Kawasaki, JP;
Tomohiro Kubo, Kawasaki, JP;
Tomonari Yamamoto, Kawasaki, JP;
Tomohiro Kubo, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
It is an object to provide a method of manufacturing a semiconductor device capable of forming a MOS transistor of high performance, comprising the steps of forming a gate electrode on a semiconductor substrate via a gate-insulating film (step S), introducing a impurity into the semiconductor substrate using the gate electrode as a mask (step S), introducing a diffusion-controlling substance into the semiconductor substrate to control the diffusion of the impurity (step S), forming a side wall-insulating film on each side surface of the gate electrode (step S), deeply introducing impurity into the semiconductor substrate using the gate electrode and the side wall-insulating film as masks (step S), activating the impurity by the annealing treatment using a rapid thermal annealing method (step S), and further activating the impurity by the millisecond annealing treatment (step S).