The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
May. 09, 2007
Hwa-yeul OH, Suwon-si, KR;
Byoung-june Kim, Seoul, KR;
Sung-hoon Yang, Seoul, KR;
Jae-ho Choi, Seoul, KR;
Yong-mo Choi, Suwon-si, KR;
Girotra Kunal, Suwon-si, KR;
Hwa-yeul Oh, Suwon-si, KR;
Byoung-june Kim, Seoul, KR;
Sung-hoon Yang, Seoul, KR;
Jae-ho Choi, Seoul, KR;
Yong-mo Choi, Suwon-si, KR;
Girotra Kunal, Suwon-si, KR;
Abstract
A method of fabricating a thin film transistor substrate includes forming a gate wiring on an insulating substrate and forming a gate insulating layer on the gate wiring; performing a first hydrogen plasma treatment with respect to the gate insulating layer; forming a first active layer with a first thickness at a first deposition rate on the gate insulating layer; performing a second hydrogen plasma treatment with respect to the first active layer; and forming a second active layer with a second thickness greater than the first thickness at a second deposition rate greater than the first deposition rate, on the first active layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile