The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Jul. 06, 2007
Tingkai LI, Vancouver, WA (US);
Douglas J. Tweet, Camas, WA (US);
Jer-shen Maa, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Tingkai Li, Vancouver, WA (US);
Douglas J. Tweet, Camas, WA (US);
Jer-Shen Maa, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method. The method provides a () Si substrate and deposits a first layer of AlN overlying the substrate by heating the substrate to a relatively high temperature of 1000 to 1200° C. A second layer of AlN is deposited overlying the first layer of AlN at a lower temperature of 500 to 800° C. A third layer of AlN is deposited overlying the second layer of AlN by heating the substrate to the higher temperature range. Then, a grading AlGaN layer is formed overlying the third layer of AlN, where 0<X<1, followed by a fixed composition AlGaN layer overlying the first grading AlGaN layer. An epitaxial GaN layer can then be grown overlying the fixed composition AlGaN layer.