The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Mar. 30, 2005
Hiroki Yoshikawa, Joetsu, JP;
Toshinobu Ishihara, Joetsu, JP;
Satoshi Okazaki, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Tadashi Saga, Tokyo, JP;
Kimihiro Okada, Tokyo, JP;
Masahide Iwakata, Tokyo, JP;
Takashi Haraguchi, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Hiroki Yoshikawa, Joetsu, JP;
Toshinobu Ishihara, Joetsu, JP;
Satoshi Okazaki, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Tadashi Saga, Tokyo, JP;
Kimihiro Okada, Tokyo, JP;
Masahide Iwakata, Tokyo, JP;
Takashi Haraguchi, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Toppan Printing Co., Ltd., Tokyo, JP;
Abstract
For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.