The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Nov. 17, 2005
John F. Conley, Jr., Camas, WA (US);
Yoshi Ono, Camas, WA (US);
John F. Conley, Jr., Camas, WA (US);
Yoshi Ono, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous AlOfilm overlying the substrate; and, forming a ZnO film overlying the AlOfilm at a substrate temperature of about 170° C., having a C-axis preference responsive to the adjacent AlOfilm. The substrate can be a material such as Silicon (Si) (100), Si (111), Si (110), quartz, glass, plastic, or zirconia. The AlOfilm can be deposited using a chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering process. Typically, the AlOlayer has a thickness in the range of about 3 to 15 nanometers (nm). The step of forming the ZnO film having a C-axis preference typically means that the ZnO film has a (002) peak at least 5 times greater than the (100) peak, as measured by X-ray diffraction (XRD).