The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Aug. 20, 2007
Applicants:
Tomonobu Tsuchiya, Hachioji, JP;
Shigehisa Tanaka, Koganei, JP;
Akihisa Terano, Hachioji, JP;
Inventors:
Assignee:
Opnext Japan, Inc., Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/323 (2006.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current.