The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2009

Filed:

Feb. 27, 2008
Applicant:

Satoshi Sakurai, San Diego, CA (US);

Inventor:

Satoshi Sakurai, San Diego, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

Bias current generation systems are disclosed. In one embodiment, a bias current generation system comprises a proportional to absolute temperature (PTAT) current source generating a PTAT current, a constant current source generating a constant current, a first current mirror forwarding the PTAT current, a second current mirror forwarding an adjusted current, where the adjusted current is the constant current subtracted by the PTAT current if the constant current subtracted by the PTAT current is greater than zero or the adjusted current is zero if the constant current subtracted by the PTAT current is less than zero, a third current mirror forwarding the adjusted current and a fourth current mirror forwarding a bias current generated by subtracting the PTAT current from the adjusted current.


Find Patent Forward Citations

Loading…