The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Sep. 25, 2007
Tathagata Chatterjee, Allen, TX (US);
Joe R. Trogolo, Plano, TX (US);
Kaiyuan Chen, Dallas, TX (US);
Henry Litzmann Edwards, Garland, TX (US);
Tathagata Chatterjee, Allen, TX (US);
Joe R. Trogolo, Plano, TX (US);
Kaiyuan Chen, Dallas, TX (US);
Henry Litzmann Edwards, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Measurements of parameters of MOS transistors, also known as MOSFETs, such as threshold potentials, require accurate estimates of source and drain series resistance. In cases where connections to the MOSFET include significant external series resistance, as occurs in probing transistors that are partially fabricated or deprocessed, accurate estimates of external resistances are also required. This invention comprises a method for estimating series resistances of MOSFETs, including resistances associated with connections to the MOSFET, such as probe contacts. This method is applicable to any MOSFET which can be accessed on source, drain, gate and substrate terminals, and does not require other test structures or special connections, such as Kelvin connections.