The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Aug. 17, 2005
Ichiro Yamamoto, Kawasaki, JP;
Ichiro Yamamoto, Kawasaki, JP;
Nec Electronics Corporation, Kanagawa, JP;
Abstract
A P-type MOSFETincludes a semiconductor substrate (N-well); a gate insulating film formed on the semiconductor substrate, composed of a high-dielectric-constant filmwhich contains a silicate compound containing a first element selected from the group consisting of Hf, Zr and any of lanthanoids, together with N; a gate electrode formed on the gate insulating film, and is configured by a polysilicon filmcontaining a P-type impurity; and a blocking oxide filmformed between the gate insulating film and the gate electrode, blocking a reaction between the first element and the polysilicon film, and having a relative dielectric constant of 8 or above.