The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Mar. 06, 2007
Jong-jin Lee, Seoul, KR;
Yo-han Sun, Suson-si, KR;
Tae-seok OH, Seoul, KR;
Sung-jae Joo, Seongnam-si, KR;
Bum-suk Kim, Seoul, KR;
Yun-ho Jang, Seoul, KR;
Sae-young Kim, Suwon-si, KR;
Keun-chan Yuk, Seoul, KR;
Jong-Jin Lee, Seoul, KR;
Yo-Han Sun, Suson-si, KR;
Tae-Seok Oh, Seoul, KR;
Sung-Jae Joo, Seongnam-si, KR;
Bum-Suk Kim, Seoul, KR;
Yun-Ho Jang, Seoul, KR;
Sae-Young Kim, Suwon-si, KR;
Keun-Chan Yuk, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.