The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7595509 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 29, 2009

Filed:

Oct. 27, 2005
Applicant:

Kenya Itani, Tokyo, JP;

Inventor:

Kenya Itani, Tokyo, JP;

Assignee:

Hitachi Cable, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

A surface of the single crystal waferfor semiconductor laser having an orientation flat formed by cleaving is polished by using the abrasive clothwith high hardness under the optimized pressure for pushing the wafer and polishing rate, such that the polishing rate on the whole surface of the respective waferbecomes uniform. The facet roll-off D occurred at a ridge of a cleavage surfaceof the single crystal waferfor semiconductor laser to be equal to or less than 40 μm. The single crystal wafer for a semiconductor laser of the present invention can provide an improvement in a precision of an optical alignment of mask pattern using the cleavage surface as a reference, and an improvement in process yield.


Find Patent Forward Citations

Itani, Kenya. (2009). Single crystal wafer for semiconductor laser (U.S. Patent No. 7595509). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7595509

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