The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Sep. 29, 2008
Young-kai Chen, Berkeley Heights, NJ (US);
Lay-lay Chua, Cambridge, GB;
Vincent Etienne Houtsma, Berkeley Heights, NJ (US);
Rose Fasano Kopf, Green Brook, NJ (US);
Andreas Leven, Gillette, NJ (US);
Chun-ting Liu, Hsin-chu, TW;
Wei-jer Sung, New Providence, NJ (US);
Yang Yang, Gillette, NJ (US);
Young-Kai Chen, Berkeley Heights, NJ (US);
Lay-Lay Chua, Cambridge, GB;
Vincent Etienne Houtsma, Berkeley Heights, NJ (US);
Rose Fasano Kopf, Green Brook, NJ (US);
Andreas Leven, Gillette, NJ (US);
Chun-Ting Liu, Hsin-chu, TW;
Wei-Jer Sung, New Providence, NJ (US);
Yang Yang, Gillette, NJ (US);
Alcatel-Lucent USA Inc., Murray Hill, NJ (US);
Abstract
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.