The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2009

Filed:

Aug. 12, 2005
Applicant:

Dening Wang, McKinney, TX (US);

Inventor:

Dening Wang, McKinney, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a semiconductor device, a method of manufacture therefore and an integrated circuit including the same. The semiconductor device (), without limitation, may include a gate electrode () having a gate length (l) and a gate width (w) located over a substrate () and a gate electrode material feature () located adjacent a gate width (w) side of the gate electrode (). The semiconductor device () may further include a silicide region () located over the substrate () proximate a side of the gate electrode (), the gate electrode material feature () breaking the silicided region () into multiple silicide portions ().


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