The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Oct. 17, 2006
Seung-ryong Lee, Ichon-shi, KR;
Moon-sig Joo, Ichon-shi, KR;
Seung-Ryong Lee, Ichon-shi, KR;
Moon-Sig Joo, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
A dielectric structure disposed between a floating gate and a control gate of a flash memory device includes: a first dielectric layer; a third dielectric layer having a k-dielectric constant substantially the same as that of the first dielectric layer; and a second dielectric layer disposed between the first dielectric layer and the third dielectric layer, having a greater k-dielectric constant than that of the first and third dielectric layers and formed by alternately and repeatedly stacking a plurality of aluminum oxide (AlO) layers and a plurality of zirconium oxide (ZrO) layers.