The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Aug. 16, 2006
James Martin Price, Austin, TX (US);
James Martin Price, Austin, TX (US);
Sematech, Inc., Austin, TX (US);
Abstract
Methods and systems for determining a charge trap density between a semiconductor material and a dielectric material are disclosed. In one respect, spectroscopic data of the semiconductor material may be determined and used to determine a change in dielectric function. A line shape fit of the change in the dielectric function may be applied using derivative function form. The amplitude of the line shape fit may be determined and used to determine an electric field of a space charge region of the semiconductor material. By applying Poisson's equations, the scalar potential due to the electric field in the space charge region may be determined. Subsequently, using the scalar potential the charge trap density may be determined.