The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Sep. 09, 2005
Applicants:
Russell J. Hemley, Washington, DC (US);
Ho-kwang Mao, Washington, DC (US);
Chih-shiue Yan, Washington, DC (US);
Inventors:
Russell J. Hemley, Washington, DC (US);
Ho-kwang Mao, Washington, DC (US);
Chih-shiue Yan, Washington, DC (US);
Assignee:
Carnegie Institution of Washington, Washington, DC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.