The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Dec. 12, 2006
Applicants:
Christian Rye Iversen, Vestbjerg, DK;
Swaminathan Muthukrishnan, Greensboro, NC (US);
Nathaniel Peachey, Oak Ridge, NC (US);
Inventors:
Christian Rye Iversen, Vestbjerg, DK;
Swaminathan Muthukrishnan, Greensboro, NC (US);
Nathaniel Peachey, Oak Ridge, NC (US);
Assignee:
RF Micro Devices, Inc., Greensboro, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H02H 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and apparatus for ESD protection of pseudomorphic high electron mobility transistor (pHEMT) circuitry are described. In one method, an ESD surge is detected at a trigger circuit. An ESD protection circuit is triggered. Current flow within the trigger circuit is limited and ESD energy is dispersed to a ground plane via the ESD protection circuit.