The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Aug. 28, 2006
Hideyuki Aota, Hyogo, JP;
Hideyuki Aota, Hyogo, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A reference voltage generation circuit includes: a first field-effect transistor that is an n channel-type field-effect transistor of a depletion-type, wherein one terminal of the first field-effect transistor is connected to a predetermined power source voltage; a second field-effect transistor including a concentrated n-type gate, wherein one terminal of the second field-effect transistor is connected to another terminal of the first field-effect transistor; and a third field-effect transistor including a concentrated p-type gate, wherein one terminal of the third field-effect transistor is connected to another terminal of the second field-effect transistor; wherein a gate of the first field-effect transistor is connected to a part where the first and the second field-effect transistors are connected, each substrate gate of the first and the third field-effect transistors is connected to a ground voltage, a gate and a substrate gate of the second field-effect transistor and a gate of the third field-effect transistor are connected to a connecting part where the second and the third field-effect transistors are connected, and a reference voltage is output from the connecting part.