The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Feb. 25, 2005
Akio Iwabuchi, Niiza, JP;
Kazuya Aizawa, Niiza, JP;
Akio Iwabuchi, Niiza, JP;
Kazuya Aizawa, Niiza, JP;
Sanken Electric Co., Ltd., Saitama, JP;
Abstract
A semiconductor device comprises a P-type semiconductor substrate (), an N-type semiconductor substrate () formed on the P-type semiconductor substrate (), an upper P-type semiconductor region () formed in the surface region of the N-type semiconductor substrate () and electrically connected to a ground electrode (), a lower P-type semiconductor region () formed beneath the upper P-type semiconductor region (), a first N-type semiconductor region () electrically connected to a drain electrode (), a P-type semiconductor region () functioning as a channel forming region, a P-semiconductor region () electrically connected to a back gate electrode (), a second N-semiconductor region () electrically connected to a source electrode (), and a gate electrode () and a gate insulating film () both on the P-type semiconductor region (), and the lower P-type semiconductor region () extends toward the first N-type semiconductor region ().