The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Jun. 21, 2005
Kensuke Takahashi, Tokyo, JP;
Kenzo Manabe, Tokyo, JP;
Nobuyuki Ikarashi, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
Kensuke Takahashi, Tokyo, JP;
Kenzo Manabe, Tokyo, JP;
Nobuyuki Ikarashi, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi(0<X<1), as a primary constituent. X is greater than 0.5 (X>0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X≦0.5) in a n-type MOSFET.