The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Sep. 28, 2006
Tae-whan Kim, Seoul, KR;
Young-ho Kim, Seoul, KR;
Chong-seung Yoon, Seoul, KR;
Jae-ho Kim, Seoul, KR;
Jae-hun Jung, Seoul, KR;
Sung-keun Lim, Seoul, KR;
Mun-seop Song, Iksan-si, KR;
Tae-Whan Kim, Seoul, KR;
Young-Ho Kim, Seoul, KR;
Chong-Seung Yoon, Seoul, KR;
Jae-Ho Kim, Seoul, KR;
Jae-Hun Jung, Seoul, KR;
Sung-Keun Lim, Seoul, KR;
Mun-Seop Song, Iksan-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A flash memory device with a nanoscale floating gate and a method of manufacturing thereof are disclosed. At least one embodiment of the present invention provides a much simpler and easier method of manufacturing nanocrystals (or nanocrystallines) for the flash memory device than the conventional method. Since the nanocrystals are homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, one embodiment of the present invention provides memory devices with nanoscale floating gates, and related methods of manufacture, of high efficiency and cost effectiveness by employing electrically and chemically more stable nanoscale floating gates compared to conventional ones.