The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Jan. 24, 2008
Hsiu-wen Hsu, Sinfong Township, Hsinchu County, TW;
Hsiu-Wen Hsu, Sinfong Township, Hsinchu County, TW;
EPISIL Technologies, Inc., Hsin-Chu, TW;
Abstract
A semiconductor device comprising the following. A structure having: a capacitor; a first resistor; and a second resistor each within at least a portion of an oxide structure and a metal-oxide semiconductor electrode not within at least a portion of the oxide structure. The capacitor comprising: a lower capacitor first doped polysilicon portion; a capacitor interpoly oxide film portion thereover; and an upper capacitor second doped polysilicon portion over at least a portion of the capacitor interpoly oxide film portion. The first resistor comprising a lower first resistor first doped polysilicon portion and an upper first resistor second doped polysilicon portion thereover. The second resistor comprising a lower second resistor first doped polysilicon portion and an upper interpoly oxide film portion thereover. The metal-oxide semiconductor electrode comprising a lower metal-oxide semiconductor first doped polysilicon portion and an upper metal-oxide semiconductor second doped polysilicon portion thereover.