The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Dec. 08, 2005
Joseph C. Boisvert, Thousand Oaks, CA (US);
Rengarajan Sudharsanan, Stevenson Ranch, CA (US);
Joseph C. Boisvert, Thousand Oaks, CA (US);
Rengarajan Sudharsanan, Stevenson Ranch, CA (US);
The Boeing Company, Chicago, IL (US);
Abstract
A photodiode and method of forming a photodiode has a substrate. An absorption layer is formed on the substrate to absorb lightwaves of a desired frequency range. A multiplication structure is formed on the absorption layer. The multiplication layer uses a low dark current avalanching material. The absorption layer and the multiplication layer are formed into at least one mesa having in an inverted 'T' configuration to reduce junction area between the absorption layer and the multiplication layer. A dielectric layer is formed over the at least one mesa. At least one contact is formed on the dielectric layer and coupled to the at least one mesa.