The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2009

Filed:

Sep. 23, 2003
Applicants:

Johannes Baur, Laaber, DE;

Dominik Eisert, Regensburg, DE;

Michael Fehrer, Bad Abbach, DE;

Berthold Hahn, Hemau, DE;

Volker Harle, Laaber, DE;

Inventors:

Johannes Baur, Laaber, DE;

Dominik Eisert, Regensburg, DE;

Michael Fehrer, Bad Abbach, DE;

Berthold Hahn, Hemau, DE;

Volker Harle, Laaber, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
Abstract

A radiation-emitting semiconductor component having a radiation-transmissive substrate (), on the underside of which a radiation-generating layer () is arranged, in which the substrate () has inclined side areas (), in which the refractive index of the substrate () is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate () has essentially perpendicular side areas () in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.


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