The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Apr. 19, 2007
Stanley M. Filipiak, Pflugerville, TX (US);
Zhi-xiong Jiang, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Zhi-Xiong Jiang, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of forming a semiconductor device comprises providing a portion of a semiconductor device structure, wherein the portion includes a region susceptible to hydrogen incorporation due to subsequent device processing. For example, the subsequent device processing can include one or more of (i) forming a layer over the region, wherein the layer includes hydrogen and (ii) using gases containing hydrogen in a plasma for the subsequent device processing, wherein the semiconductor device is subject to an undesirable device characteristic alteration by hydrogen incorporation into the region. The method further comprises forming a hydrogen barrier layer overlying the region, wherein the hydrogen barrier layer prevents substantial migration of hydrogen made available due to the subsequent device processing into the underlying region. The method further includes performing the subsequent device processing.