The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Dec. 22, 2004
Yoshihiro Takao, Kawasaki, JP;
Yoshihiro Takao, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
The semiconductor device comprises a wellformed in a semiconductor substrateand having a channel region; a gate electrodeformed over the channel region with an insulating filminterposed therebetween; source/drain regionsformed in the wellon both sides of the gate electrode, sandwiching the channel region; and a pocket regionformed between the source/drain region and the channel region. The wellhas a first peak of an impurity concentration at a depth deeper than the pocket regionand shallower than the bottom of the source/drain regions, and a second peak of the impurity concentration at a depth near the bottom of the source/drain regions