The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Sep. 20, 2007
Applicants:
Pei-ing Lee, Changhua County, TW;
Chung-yuan Lee, Taoyuan, TW;
Chien-li Cheng, Hsinchu, TW;
Inventors:
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor is formed in each trench. A protrusion is formed on each deep trench capacitor, wherein a top surface level of each protrusion is higher than that of the pad layer. Spacers are formed on sidewalls of the protrusions, and the pad layer and the substrate are etched using the spacers and the protrusions as a mask to form a recess. A recessed gate is formed in the recess.