The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Jun. 26, 2008
Eun Shil Park, Namyangju-si, KR;
Kwon Hong, Seongnam-si, KR;
Jae Hong Kim, Seongnam-si, KR;
Jae Hyoung Koo, Seoul, KR;
Eun Shil Park, Namyangju-si, KR;
Kwon Hong, Seongnam-si, KR;
Jae Hong Kim, Seongnam-si, KR;
Jae Hyoung Koo, Seoul, KR;
Hynix Semiconductor Inc., Icheon-Si, KR;
Abstract
The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a semiconductor substrate over which a tunnel insulating layer and a first conductive layer are formed is provided. A first oxide layer is formed on the first conductive layer using a plasma oxidization process in a state where a back bias voltage is applied. A nitride layer is formed on the first oxide layer. A second oxide layer is formed on the nitride layer. A second conductive layer is formed on the second oxide layer.