The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Jun. 01, 2005
Method of evaluating characteristics of and forming of an insulating film for a semiconductor device
Masayasu Miyata, Suwa, JP;
Masayasu Miyata, Suwa, JP;
Seiko Epson Corporation, , JP;
Abstract
A method of evaluating characteristics of an insulating filmis disclosed. The insulating filmis formed of an insulative inorganic material as a main material, the insulative inorganic material containing silicon and oxygen. The insulating filmfurther contains hydrogen atoms. The method includes the steps of: analyzing the insulating filmto which an electric field has never been applied by Thermal Desorption Spectroscopy; comparing intensity of an Hfragment with intensity of an OH fragment, the intensity of the Hfragment and the intensity of the OH fragment being measured at a state where the insulating filmis heated at a temperature in the range of 500 to 1000° C.; and evaluating the characteristics of the insulating filmon the basis of the comparison result.