The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2009

Filed:

Dec. 26, 2007
Applicants:

Ching-yu Chou, Hsinchu, TW;

Yu-ning Wang, Hsinchu, TW;

Jih-jenn Huang, Hsinchu, TW;

Yi-ming Liao, Hsinchu, TW;

Inventors:

Ching-Yu Chou, Hsinchu, TW;

Yu-Ning Wang, Hsinchu, TW;

Jih-Jenn Huang, Hsinchu, TW;

Yi-Ming Liao, Hsinchu, TW;

Assignee:

ICF Technology Limited, Santa Clara, unknown;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a patterned layer () on a substrate () includes the following steps: providing a substrate having a plurality of banks () formed thereon, the substrate and the banks cooperatively defining a plurality of accommodating spaces (), wherein each of the accommodating spaces has a first edge () and a second edge () parallel to the first edge, a distance between the first edge and the second edge is b; the first nozzle () moving along a first path (), and the first path is parallel to the first edge, a distance between the first path and the first edge is a; the first nozzle jetting ink into the accommodating space; the second nozzle () moving along a second path (), a distance between the first path and the second path is c, and the distance c satisfies one of the two equations: 0<c<b−a, and 0<c<a.


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