The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Jun. 22, 2006
Applicants:
Kenichi Ono, Tokyo, JP;
Masayoshi Takemi, Tokyo, JP;
Harumi Nishiguchi, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first cladding layer thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than in the second buffer layer. In such a structure, when a window region is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.