The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Mar. 06, 2007
Hideki Sato, Iwata-gun, JP;
Toshiyuki Oohashi, Hamamatsu, JP;
Yukio Wakui, Iwata-gun, JP;
Susumu Yoshida, Hamamatsu, JP;
Kokichi Aiso, Hamamatsu, JP;
Hideki Sato, Iwata-gun, JP;
Toshiyuki Oohashi, Hamamatsu, JP;
Yukio Wakui, Iwata-gun, JP;
Susumu Yoshida, Hamamatsu, JP;
Kokichi Aiso, Hamamatsu, JP;
Yamaha Corporation, Shizuoka-Ken, JP;
Abstract
On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrateare formed magnetic layers that will become two magnetic tunnel effect elementsas magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elementsis pinned in the directions shown by arrows B.