The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2009

Filed:

Jun. 19, 2007
Applicants:

Achim Haesters, Pulheim, DE;

Bernd Dienhart, Köln, DE;

Joachim Waschkies, Kürten, DE;

Guido Lindeke, Bergisch Gladbach, DE;

Cornelius Peter, Buehl, DE;

Angelika Peter, Legal Representative, Buehl, DE;

Inventors:

Achim Haesters, Pulheim, DE;

Bernd Dienhart, Köln, DE;

Joachim Waschkies, Kürten, DE;

Guido Lindeke, Bergisch Gladbach, DE;

Cornelius Peter, Buehl, DE;

Angelika Peter, legal representative, Buehl, DE;

Assignee:

Ford Motor Company, Dearborn, MI (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02P 23/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The subject of the present invention is a motor control system having a monitoring circuit for monitoring PWM control for a DC electric motor, the PWM control comprising a power end stage having at least one field effect transistor, which controls the current at the DC electric motor. The motor control system is designed to monitor the current at the DC electric motor. The motor control system detects the voltage drop across the field effect transistor and comprises a temperature sensor for detecting the temperature of the field effect transistor. Furthermore, the motor control system is designed to determine the resistance of the field effect transistor from the detected temperature thereof, and to determine the current at the DC electric motor from the resistance of the field effect transistor and from the voltage drop across the field effect transistor.


Find Patent Forward Citations

Loading…