The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Jun. 16, 2006
Sudhama Shastri, Phoenix, AZ (US);
Ryan Hurley, Gilbert, AZ (US);
David Heminger, Phoenix, AZ (US);
Yenting Wen, Chandler, AZ (US);
Mark A. Thomas, Negri Sembilan, MY;
Sudhama Shastri, Phoenix, AZ (US);
Ryan Hurley, Gilbert, AZ (US);
David Heminger, Phoenix, AZ (US);
Yenting Wen, Chandler, AZ (US);
Mark A. Thomas, Negri Sembilan, MY;
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
In one embodiment, a filter structure that integrates one plate of a capacitor with an electrode of a transient voltage device. The filter structure includes a well region of one conductivity type formed in semiconductor substrate of an opposite conductivity type. The well region forms one plate of the capacitor and an electrode of the transient voltage suppression device. A dielectric layer is formed over a portion of the well region and a conductive layer is formed overlying the dielectric layer to provide a second plate of the capacitor. The dopant concentration of the well region provides a constant capacitance/voltage characteristic for the filter structure when a selected voltage range is applied to plates of the capacitor.