The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Dec. 22, 2005
Applicant:
Masakatsu Suzuki, Hirakata, JP;
Inventor:
Masakatsu Suzuki, Hirakata, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract
A solid-state imaging device includes a semiconductor substrate () with a photodetector portion (). The photodetector portion () includes a p-type first impurity region (surface inversion layer) () formed in the semiconductor substrate () and an n-type second impurity region (photoelectric conversion region) () formed below the surface inversion layer (). The photoelectric conversion region () is formed by introducing an n-type impurity into the semiconductor substrate (). The surface inversion layer () is formed by introducing indium into a region of the semiconductor substrate () where the photoelectric conversion region () is formed.