Method of chemical mechanical polishing and method of fabricating semiconductor device using the same

Abstract

There is provided a method of chemical mechanical polishing (CMP) and a method of fabricating a semiconductor device using the same. The method includes forming a layer to be polished on a semiconductor substrate including a normally polished region and a dished region, and forming a dishing (i.e., over-polishing)-preventing layer on the layer to be polished in the region where dishing may occur. Then, the layer to be polished is polished while dishing thereof is prevented using the dishing-preventing layer. Accordingly, the dishing-preventing layer is formed in the region where the dishing (i.e., over-polishing) may occur, so that the dishing is prevented from occurring in a region where pattern density is low and a pattern size is large in the process of CMP.