The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Dec. 27, 2006
Applicant:
Ji Ho Hong, Gyeonggi-do, KR;
Inventor:
Ji Ho Hong, Gyeonggi-do, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Embodiments relate to a method of forming a copper metal interconnection in a semiconductor device using a damascene process. In embodiments, the method may include forming a damascene pattern in an interlayer dielectric layer on a semiconductor substrate, burying a copper plating layer in the damascene pattern using an ECP method, forming a recess on the copper plating layer buried in the damascene pattern, and forming a barrier metal layer in the recess. Since the barrier metal layer may be locally formed on the copper metal interconnection, it may be possible to prevent the diffusion of the copper although the size of the pattern is small.